LINQSOL EMC-G374
Harmonization Code : 3907.30.00.40 | Epoxy Mold Compounds containing by weight more than 70 % silicon dioxide
Main features
- Ultra-high glass transition temperature (272 °C)
- Designed for high-power SiC and GaN devices
- High degradation temperature, and excellent thermal stability
Product Description
LINQSOL™ EMC-G374 is a next-generation, epoxy molding compound engineered specifically for high-power, high-voltage SiC and GaN packages. Its ultra-high Tg (272 °C), high degradation temperature (460 °C) provide exceptional thermal stability through assembly and operation, and a UL 94 V-0 flammability rating highlighting its adherence to stringent safety standards for high-power semiconductor applications. EMC-G374 guarantees strong performance and outstanding reliability in demanding automotive, industrial, and energy systems.
With very low ionic content, low dissipation factor (0.0013), moderate dielectric constant (3.5), and very high volume resistivity (6.0×10¹⁶ Ω·cm), EMC-G374 safeguards creepage/clearance and partial-discharge performance in high-voltage modules. Fast gel (28 s @ 175 °C), spiral flow (100 cm), and short cure (2.5–4 min @ 175 °C) enable efficient molding cycles.
Overall, LINQSOL EMC-G374 seamlessly integrates advanced material properties, safety compliance, and superior performance, precisely meeting the stringent demands of high-power semiconductor components such as TO packages LINQSOL EMC-G374 finds its niche in high-voltage and high-power discrete packages and power modules, including but not limited to IGBT, TO220, TO247, and other surface mount devices.
Key Features
- Ultra-High Tg (272 °C): Withstands high junction temps and aggressive reflow and sintering profiles.
- High Degradation Temp (460 °C): Extra thermal safety margin vs. conventional EMCs.
- Low CTE (12/52 ppm/°C): Mitigates die/package stress and warpage in large-area power chips.
- High Modulus Retention: 21/9.5 GPa (25/260 °C) supports mechanical stability at heat.
- Excellent Moldability: Spiral flow 100 cm, viscosity 42,000 cP @ 175 °C, gel 28 s for fast, complete fill.
- Electrical Insulation Integrity: 6.0×10¹⁶ Ω·cm volume resistivity for HV isolation.
- Low Loss Dielectric: Df 0.0013, Dk 3.512 to reduce heating and leakage under AC stress.
- Clean Chemistry: Cl ≤2.1 ppm / Na ≤1.3 ppm / SO₄²⁻ <1.0 ppm lowers corrosion/ionic migration risk.
- Moisture Control: 0.8% PCT (96 h) aids reliability in humid/condensing environments.
- Safety: UL94 V-0 flammability rating for compliance-driven markets.
Applications suitable for:
- SiC MOSFET / Schottky diode modules and GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) power packages
- Automotive traction inverters, on-board chargers (OBC), DC/DC converters
- Industrial drives, servo inverters, robotics, welding power supplies
- Renewable/ESS inverters (PV, wind, battery), UPS and server/telecom PSUs
- High-temperature, high-voltage power modules and transfer-molded packages
